Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft
2018 IEEE International Electron Devices Meeting (IEDM)（2018）
关键词
NC-FinFET ring oscillator,FinFET oscillator,NC-FET cut-off frequency,negative-capacitance FinFET inverter,SRAM cell,subthreshold swing,2-level metal backend integration,orthorhombic phase,HZO thin film,NC-FinFET inverter,HfO2 gate dielectric,gate stack,thermal budget process,Ni silicide,CO2 far-infrared laser activation,ferroelectric HfZrO2 thin film,NC-FinFET SRAM,temperature 400.0 degC,frequency 23.1 GHz,size 3.0 nm to 7.0 nm,HfO2,HfZrO2,CO2,Ni
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