Multi-Domain Process Modeling For Advanced Logic And Memory Devices: From Equimpments To Materials

Inkook Jang,Hyoungsoo Ko,Alexander Schmidt,Sae-Jin Kim,Moonhyun Cha,Hyoshin Ahn, Honglae Park,Dae Sin Kim,Ho-Kyu Kang

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2018）

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摘要

For modem semiconductor devices, the level of details which we should investigate for predictive simulation is going extreme. Not only the atomistic simulation is required but equipment and transistor scale simulation is also needed to understand the formation of atomic scale feature. In this paper, practical applications of multi-domain simulations are introduced for advanced S/D process in logic, interface engineering in DRAM cell and cell stack ALD process of flash memory devices.

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关键词

advanced logic devices,semiconductor devices,multidomain process modeling,TCAD simulation,interface engineering,DRAM cell,cell stack ALD process,flash memory devices,advanced S/D process,multidomain simulations,transistor scale simulation,atomistic simulation,predictive simulation

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