Hardware Acceleration of Simulated Annealing of Spin Glass by RRAM Crossbar Array

2018 IEEE International Electron Devices Meeting (IEDM)(2018)

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摘要
Simulated annealing (SA) was successfully implemented and accelerated by in-memory computing hardware/software package using RRAM crossbar arrays to solve a spin glass problem. Ta 2 O 5 -based RRAM array and stochastic Cu-based CBRAM devices were utilized for calculation of the Hamiltonian and decision of spin-flip events, respectively. A parallel spin-flip strategy was demonstrated to further accelerate the SA algorithm.
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关键词
hardware acceleration,simulated annealing,RRAM crossbar array,in-memory computing hardware/software package,spin glass problem,RRAM array,spin-flip events,parallel spin-flip strategy,stochastic CBRAM devices,Ta2O5,Cu
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