Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%

L. Barrutia,I. Garcia,E. Barrigon,M. Ochoa, I. Lombardero,M. Hinojosa,P. Cano,J. Bautista,L. Cifuentes,I. Rey-Stolle,C. Algora

Spanish Conference on Electron Devices（2018）

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摘要

This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of similar to 40% at similar to 415x is presented.

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关键词

multijunction solar cell,MOVPE,III-V semiconductors,Ge wafers

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