GaxSe10-x based solar cells: Some alternatives for the improvement in their performance parameters

We report on strategies that improve Se-derivative based solar cells performance. With this aim, a compact thin film based on ZnO nanoparticles is deposited onto fluorine doped tin oxide (FTO) as an electron-transport layer, in thermally evaporated GaxSe10-x based solar cells. ZnO nanoparticles films are synthesized by sol-gel process whereas GaxSe10-x material is obtained by mechanical alloying. Using current-voltage measurements, impedance spectroscopy, and capacitance-voltage profiling, device characteristics and performance limiting factors are revealed and discussed. Particularly, the use of ZnO nanoparticles results in improved device performance as well as long-term stability. In comparison to Se-only devices with the structure FTO/Se/Au (power conversion efficiency of 0.98%), under 100 mW/cm2 AM 1.5 G illumination the devices achieved a power conversion efficiency of 2.7% with the structure FTO/ZnO/GaSe9/Au (open circuit voltage of 0.71 V, short-circuit current of 7.9 mA/cm2). Hence, an increase of around 175% in the power conversion efficiency is obtained in comparison to Se-only devices. In addition, the effect of others parameters, like thickness of the active layer as well as the gallium contents in the alloy, are discussed.