O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Journal of Crystal Growth(2019)

Cited 35|Views65
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Abstract
•III-V laser monolithically integrated on a CMOS-compatible Si substrate.•MBE-grown InAs/GaAs quantum dot laser on Si with low threshold current density (160 A/cm2)•Single facet output power of 48 mW at injection current density of 500 A/cm2 at room temperature.•Laser operation up to 52 °C under continuous-wave operation mode with characteristic temperature of 60.8 K.
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Key words
A1. Low dimensional structures,A3. Molecular beam epitaxy,B2. Semiconducting III-V materials,B3. Laser Diodes
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