O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Keshuang Li,Zizhuo Liu,Mingchu Tang,Mengya Liao,Dongyoung Kim,Huiwen Deng,Ana M. Sanchez,R. Beanland,Mickael Martin,Thierry Baron,Siming Chen,Jiang Wu,Alwyn Seeds,Huiyun Liu

Journal of Crystal Growth（2019）

Cited 35|Views65

No score

Abstract

•III-V laser monolithically integrated on a CMOS-compatible Si substrate.•MBE-grown InAs/GaAs quantum dot laser on Si with low threshold current density (160 A/cm2)•Single facet output power of 48 mW at injection current density of 500 A/cm2 at room temperature.•Laser operation up to 52 °C under continuous-wave operation mode with characteristic temperature of 60.8 K.

Translated text

Key words

A1. Low dimensional structures,A3. Molecular beam epitaxy,B2. Semiconducting III-V materials,B3. Laser Diodes

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined