Vanadium-doped molybdenum disulfide film-based strain sensors with high gauge factor
APPLIED PHYSICS EXPRESS(2019)
Abstract
This paper reports the piezoresistive performance of the two-dimensional (2D) material of vanadium (V)-doped molybdenum disulfide (MoS2) films based on sulfurization of sputtered Mo thin films. I-V characteristics indicate that V atom doping indeed decreases the resistivity of MoS2. Strain sensors based on V-doped MoS2 resistive elements were fabricated. By using a four-point bending method, a gauge factor (GF) of 140 under compressive and tensile strain conditions was obtained. The piezoresistive effect of V-doped MoS2 with different V sputtering conditions was also investigated. The doping method introducing V atoms as dopants is found to play an important role in enhancing piezoresistive performance. (C) 2019 The Japan Society of Applied Physics
MoreTranslated text
Key words
strain sensors,vanadium-doped,film-based
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined