Simulation, Fabrication and Characterization of 3300V/10A 4H-SiC Power DMOSFETs
2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)(2018)
Abstract
Power devices of the 3.3 kV class are of much interest to various industries, particularly rail transportation and industrial medium voltage motor drives. In this paper, 4H-SiC power DMOSFETs with breakdown voltage higher than 3.6 kV has been successfully fabricated by using an. 30 μm-thick, 2.8×10
15
cm
-3
doped drift epilayer. The JFET regions were implanted with nitrogen ions to minimize the current spreading resistance. A 4H-SiC DMOSFET with an active area of 0.08 cm
2
showed a specific on-resistance of 19.7 mΩ-cm
2
at room temperature with a gate bias of 20 V. The device shows a leakage current of 23 μA, which corresponds to a leakage current density of 142μA/cm
-2
at a drain bias of 3.3 kV. In this report, the influence of JFET region width to the DMOSFETs on-state current density was studied by a test MOSFET with an active area of 8.0×10
-4
cm
2
.
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Key words
Silicon Carbide,DMOSFET,Breakdown Voltage,Specific on-resistance
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