Development of 1.7 kV $40 \mathrm{m}\Omega$ 4H-SiC Power DMOSFETs

In this paper, al.7 kV power DMOSFETs in 4H-SiC were reported. The device utilized 14 um thick n-type epilayers with a doping concentration of 7×10 ¹⁵ cm ^-3 for drift layer. The active area size of 1.7kV DMOSFET device is 20. 5×10 ^-32 cm ² . The device was able to support a blocking voltage of 2 kV with gate electrode shorted to the source electrode. The device shows a leakage current density of 68uA/cm ² . At room temperature, the 4H-SiC DMOSFET showed a specific on-resistance (Ron, sp) of 8.2 mΩ-cm ² and an I _D of 50A at V _DS of 2.0V. The paper shows the blocking and conduction characteristics of the device from 25°C to 150 °C and the device demonstrated extremely fast, low loss swithing characteristics.