1/F Noise Characterization Of Piezoresistive Nano-Gauges For Mems Sensors

This paper describes the study carried out in order to characterize the influence of the main fabrication steps of the silicon nano-gauge on their 1/f noise. Geometry of the nano-gauge, doping level, thinning process of gauges, doping before or after gauges patterning, release process and treatments for trap curing have been studied. Gauges release has a great impact on the 1/f noise: it increases the noise by a factor of up to 100 for the smallest gauges. N2H2 annealing and O-2 plasma treatment reduce the noise generated by the release of the gauge. We assume that the origin behind the noise increase is the trapping-detrapping of carriers in surface traps of the nano-gauge.