Design of a Gate Diode Triggered SCR for Dual-Direction High-Voltage ESD Protection

Hailian Liang,Qiang Xu,Ling Zhu,Xiaofeng Gu,Guipeng Sun,Fen Lin,Sen Zhang,Kui Xiao,Zhiguo Yu

IEEE Electron Device Letters（2019）

引用 35|浏览11

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摘要

A novel gate diode triggered silicon-controlled rectifier (GDTSCR) with dual-direction high-voltage (HV) electrostatic discharge (ESD) protection and a low snapback voltage is proposed and investigated. Compared to conventionalMOS triggered SCR (MTSCR), the GDTSCR has two gate diodes and one additional n-p-n. Superior to the MTSCR, the GDTSCR exhibits a high holding voltage of 15 V, a small trigge...

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关键词

Electrostatic discharges,Logic gates,Robustness,Transistors,Stress,Temperature,Cathodes

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