Fabrication and Characterization of Epitaxial Gd-Doped SBN Thin Films

Gd-doped Sr0.5Ba0.5Nb2O6 (SBN50) thin films with Gd-doping concentration ranging from 1 to 4% are grown on Pt-coated MgO (100) substrates using pulsed laser deposition technique. X-ray diffraction studies show that the films are highly (001)-oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd-SBN films possess good ferroelectric properties. Ramanent polarization of +P-r = 1.36 mu C cm(-2) and -P-r = -5.73 mu C cm(-2) and coercive field of +E-c = 158.0 kV and -E-c = -30.8 kV are obtained.