Study of degradation in InGaP/InGaAs/Ge multi-junction solar cell characteristics due to irradiation-induced deep level traps using finite element analysis
Solar Energy（2019）
Abstract
•The detailed optimized structure of InGaP/InGaAs/Ge 3J solar cell is presented.•A simulation model showing diffusion length variation is proposed for InGaP & InGaAs.•The experimental J-V of 3J solar cell has been compared with the simulated result.•Current matching between top and middle cell is presented considering deep level traps.•A peak η of 30% has been obtained in the presence of traps and interface recombination.
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Key words
III-V multi-junction solar cell,Trap level,Minority electron lifetime,Device modeling
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