Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Journal of Crystal Growth（2019）

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摘要

•CdMnTe growth by vertical Bridgman method.•Free from Te-inclusions >1 µm.•X-ray topography.

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关键词

A1. Characterization,A1. Extended defects,A1. Sub-grain boundary network,A2. Bridgman,B2.CdMnTe,B2. Semiconducting II-VI materials

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