Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ as Gate Dielectric

In this letter, we report optimized transport properties in gate recessed enhancement-mode GaN MOS-HEMTs by incorporating silicon into atomic layer deposited gate dielectric HfO2. Compared with commonly used HfO2 gate dielectric, the interface trap density can be reduced by nearly an order of magnitude and the fixed oxide traps inside are reduced to almost half using the high-quality passivation o...