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Influence of base structural parameters on responsivity and characteristic frequency of SiGe Heterojunction Phototransistor

Pei Ma,Hong-Yun Xie,Quan-Xiu Chen,Rui Liu,Liang Chen,Jia-hui Wu,Wan-Rong Zhang

2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)（2018）

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Abstract
The effect of different base structural parameters on SiGe Heterojunction Phototransistor (HPT) performance is analyzed in this paper. It proposes a reference for designing SiGe HPT with both high responsivity and high characteristic frequency. Responsivity of 5.58 A/W and characteristic frequency of 21.29 GHz for 850 nm light are achieved when the thickness of base layer is 70 nm with the doping concentration of 1.0×10 19 cm -3 .
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Key words
SiGe HPT,high characteristic frequency,base layer,SiGe heterojunction phototransistor,base structural parameters,frequency 21.29 GHz,size 850.0 nm,size 70.0 nm,SiGe
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