Recent Progress In Gan Device Technology

Nobuyuki Otsuka,Yuji Kudoh,Hiroaki Ueno,Asamira Suzuki

2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)（2018）

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Abstract

Several new technologies for GaN high frequency devices and GaN power devices are reviewed. Newly developed GaN devices have a superior performance over conventional Si-based ones in view of lowering the energy loss and reducing the system size. Normally-off GaN HFETs are demonstrated.

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Key words

GaN device technology,GaN high frequency devices,GaN HFET,GaN power devices,GaN

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