Antiferromagnetic EuTe Clusters in Ge1-xEuxTe Semiconductors

We present studies of structural, electrical, and magnetic properties of Ge1-xEuxTe bulk crystals with the chemical composition, x, changing from 0.020 to 0.025. The sample synthesis leads to the formation of EuTe clusters in all our samples. Moreover, the presence of Ge1-xEuxTe spinodal decompositions with broad range of chemical contents is observed even for the sample with x = 0.020. Spinodal decompositions show the antiferromagnetic order with the Neel temperature, T-N, equal to about 11 K, close to that for EuTe. The magnetic field dependence of the magnetization, M(B), is characteristic of the presence of magnetic inclusions in the samples.