Chalcogenide-Based Artificial Intelligence Synaptic Device

In this work, we investigated sputtered undoped and N-doped Sb2Te3 chalcogenide phase change films by x-ray diffraction and resistance measurements. The application to artificial intelligence synaptic device is presented as well. Mean crystal size decreased from 6.8 to 2.9 nm and thus crystal growth was significantly suppressed by fine nitrides due to N-doping. The resistivity of as-deposited N doped Sb2Te3 could be around 2-3 orders of magnitude higher than that of undoped Sb2Te3 film. The N doped Sb2Te3 chalcogenide artificial intelligence synaptic device exhibited nonvolatility from the measured electrical characteristics because the states induced by current sweeping were very stable. The increase and decrease of conductance corresponding to the long-term potentiation and depression of synaptic weight, were demonstrated by current sweepings and voltage pulses, respectively.