High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability

We investigate the enhancement in transparency and conductivity of aluminum doped zinc oxide (ZnO:Al) layers upon high-temperature annealing and its impact on contact resistance, as well as, on passivation properties of carrier selective junctions based on doped polycrystalline Si on a passivating silicon oxide (POLO). The temperature stability of these junctions allows annealing of the ZnO:Al/POL...