The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

Anup P. Omprakash,Adrian Ildefonso,Zachary E. Fleetwood,George N. Tzintzarov,Adilson S. Cardoso,Jeffrey A. Babcock,Rajarshi Mukhopadhyay,Ani Khachatrian,Jeffrey H. Warner,Dale McMorrow,Stephen P. Buchner,John D. Cressler

IEEE Transactions on Nuclear Science（2019）

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摘要

The single-event transient response of a high-voltage complementary SiGe-on-silicon-on-insulator technology is investigated along with its temperature dependence using a pulse laser. The p-n-p silicon-germanium heterojunction bipolar transistor (SiGe HBT) shows a larger transient peak amplitude compared to the n-p-n SiGe HBT, which is largely related to the differences in total device volume and p...

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关键词

Transient analysis,Silicon germanium,Temperature dependence,Temperature measurement,Transient response,Heterojunction bipolar transistors,Temperature sensors

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