Current Mirrors Based On Graphene Field-Effect Transistors

Current mirrors are significant elements in analog integrated circuits. Here, graphene-based field-effect transistors (GFETs) are fabricated and the parameters of device model for the fabricated GFETs are extracted from the measured I-V characteristics. The GFETs model was then coded with Verilog-A language for circuit simulation. Using simulation, we investigate the electrical properties of GFETs-based current mirrors. We found that in simple current mirror configuration, the output current is intensively dependent on the output voltage, and cannot track the reference current well. However, in GFETs-based cascode current mirror configuration, the output current can track the reference current in a proper range of output voltage, indicating the GFETs can implement cascode current mirrors. Furthermore, the GFETs-based cascode current mirror working as a load can efficiently improve the voltage gain of the GFETs-based amplifiers when compared to a resistor load.