Design And Process Technology For High Q Integrated Inductor On Interposer With Tsv

In this paper, a novel through-silicon via(TSV) interposer integrated inductor are proposed to avoid the substrate loss to achieve high Q inductor for radio frequency(RF) applications. The spiral inductor by the use of a hollow structure to suspend on the silicon substrate and the distance between them is 40um at least. With the simulation and process, the suspending spiral inductor sample is fabricated and tested. The max quality factor increases to 210% between 0.1 GHz and 20 GHz in comparison with the conventional spiral inductor. The results show the potential for application of the suspending inductors integrated on interposer in RF circuits.