Device Relevant Doped Amorphous Silicon Thin Films By Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

Hydrogenated doped silicon thin films deposited using Inductively Coupled Plasma Enhanced Chemical Vapour Deposition were investigated for their film characteristics. In particular, the dilution ratio (H-2: SiH4) and trimethylborane dopant gas ratio (TMB: SiH4) were varied in order to analyze their effect on the degree of crystallinity and conductivity. mu Raman Spectroscopy and 4-Point Probe techniques were employed to investigate the transverse optical peaks of the three silicon phases and obtain 9-point conductivity mapping of the full-area film, respectively. Effective minority carrier lifetimes and implied open-circuit voltages were analyzed via Quasi-Steady State Photoconductance method. High-quality a-Si: H(p)/a-Si: H(i)/cSi(n)/a-Si:H(i)/a-Si:H(n) stacks capped with transparent conductive oxide on both sides were fabricated with an implied open-circuit voltage around 760 mV.