Incorporation of indium into the Zn13Sb10 thermoelectric material
Journal of Alloys and Compounds(2019)
Abstract
The composition of the In-substituted Zn13Sb10 phases follows the Zn13-1.5xInxSb10 charge-balanced formula and the reduction in the Zn content is due to the In3+ oxidation state, compared to the Zn2+ oxidation state. Zn deficiency in the In-doped samples is supported by the X-ray powder diffraction and EDS elemental analyses. Single-crystal X-ray diffraction refinement backs the Zn deficiency by revealing absence of Zn atoms in the interstitial sites and decreased occupancy of the main Zn site.
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Key words
Zinc antimonide,Thermoelectric properties,Crystal structure,Point defects,Phase transitions
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