N-Type Metallization Pastes With Improved Contact

Gregory A. Becht,Sandra Kanapathy,Ryan W. Mayberry, Mark O. Naylor,Matthias Horteis, Kirsten E. Myers

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)（2018）

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Abstract

Herein we report the development of a silver paste, containing a newly developed glass, with improved contact resistance to mono-crystalline n-type silicon wafers with boron emitters. The contact resistivity of this paste is below 1.5 mOhm.cm2on a 75 Ohm/sq. wafer representing a 3x drop vs. the base line paste while maintaining a 5 mV Voc advantage. Cells made with this paste showed an increase in efficiency of 0.37%. The efficiencies of cells made using this paste are stable when the firing peak maximum temperature was varied from 780 degrees C to 800 degrees C.

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Key words

metallization, photovoltaic cells, silicon

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