Deposition And Characterization Of Sns:Cu Thin Films By Ultrasonic Spray Pyrolysis Technique To Applications In Photovoltaic Devices

Tin sulfide (SnS) thin films have attracted attention for its great potential for photovoltaic applications as absorber material due to its optical properties, stability and structural characteristics, however, the efficiency of photovoltaic structure based undoped SnS has been found to be low due to their low conductivity. In this work, we analyzed the influence doping of copper (Cu) on SnS (SnS: Cu) thin films and how are affected its structural and optoelectronic properties. The SnS: Cu thin films were obtained by ultrasonic spray pyrolysis technical at different Cu concentrations (0, 2, 5 and 10 %), controlling the other deposit parameters. X-Ray Diffraction studies show changes in the structure as increasing the level of doped going from being orthorhombic to cubic. We used transmittance and reflectance versus wavelength measurements to determine the energy band gap. We found an increment in the band gap when the doping concentration was increased. From Hall-Van der Pauw effect, the electrical properties (resistivity, carrier concentration, mobility) were measured. We observe a decrement of the resistivity with the increment on the doping concentration.