Layout Modification of a PD-SOI n-MOSFET for Total Ionizing Dose Effect Hardening

A dummy-gate-assisted n-type metal-oxide-semiconductor field-effect transistor (DGA n-MOSFET) structure was modified to allow the use of a silicon-on-insulator (SOI) substrate and evaluated for robustness against the total ionizing dose effect. The modified DGA n-MOSFET on the SOI substrate suppressed all possible radiation-induced leakage current paths by isolating both the drain and source from ...