General rules of the sub-band gaps in group-IV (Si, Ge, and Sn)-doped I-III-VI2-type chalcopyrite compounds for intermediate band solar cell: A first-principles study

Dan Huang,Jing-Wen Jiang,Jin Guo,Yu-Jun Zhao,Rongzhen Chen,Clas Persson

Materials Science and Engineering: B（2018）

引用 14|浏览7

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摘要

•The absolute energy positions of IBs from the same dopant do not show big changes.•Sn-doped CuAlSe2 has been selected out as a potential candidate for IBSC.•Alloying with isovalent cation to adjust the sub-band gaps has been demonstrated.

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关键词

Intermediate band solar cell,Chalcopyrite compound,First-principles calculation,Doping

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