Metamorphic Narrow-Gap Insb/Inassb Superlattices With Ultra-Thin Layers
APPLIED PHYSICS LETTERS(2018)
摘要
Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented. Published by AIP Publishing.
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关键词
narrow-gap,ultra-thin
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