Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates

Huiqi Gong,Kai Ni,En Xia Zhang,Andrew L. Sternberg,John A. Kozub,Michael L. Alles,Robert A. Reed,Daniel M. Fleetwood,Ronald D. Schrimpf,Niamh Waldron,Bernardette Kunert,Dimitri Linten

IEEE Transactions on Nuclear Science（2019）

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摘要

The pulsed-laser single-event transient response of InGaAs FinFETs on bulk silicon substrates is investigated. Charge collection due to a source-drain shunt effect and drain-to-substrate junction charge collection contribute to the observed transients. The transient response of these silicon substrate devices is compared to that of InGaAs FinFETs on semi-insulating substrates. Faster transients wi...

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关键词

Silicon,Substrates,FinFETs,Indium gallium arsenide,Transient analysis,Logic gates,III-V semiconductor materials

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