Development of multi-function digital optoelectronic integrated sensor

A multi-function optoelectronic integrated sensor based on the 180 nm standard CMOS process for ambient light detection and position sensing is proposed. The monolithic opto-electronic integrated receiver chip is made of a photodetector (PD), a trans-impedance amplifier (TIA), an analog to digital converter (ADC), and a driving circuit of light-emitting diode (LED). A prototype of the sensor has be implemented and tested, and the opto-electronic model of PD is built and simulated for OEIC Co-design. The sensor has been demonstrated a linear detection of the ambient light with intensity between 0 lx and 10000 lx and the detection precision was measured to be 8.79 lx. The precision of proximity distance detection reaches 0.1mm. Simple recognition of object moving direction can be realized. The sensor can be widely used in smart phones, portable wearable devices and other intelligent product terminals.