Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts
IEEE Transactions on Nuclear Science(2019)
Abstract
Silicon-on-insulator latch designs and layouts that are robust to multiple-node charge collection are introduced. A general Monte Carlo radiative energy deposition (MRED) approach is used to identify potential single-event susceptibilities associated with different layouts prior to fabrication. MRED is also applied to bound single-event testing responses of standard and dual interlocked cell latch...
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Key words
Latches,Layout,Single event upsets,MOSFET,Redundancy
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