64Gb/s Electro Absorption Modulator Operation in InP-Based Active-Passive Generic Integration Platform

M. Trajkovic,F. Blache,F. Jorge, K. Mekhazni,J-G. Provost,H. Debregeas, E. den Haan,L. M. Augustin,K. A. Williams,X. J. M. Leijtens

ECOC（2018）

引用 3|浏览69

暂无评分

摘要

We have designed, fabricated and characterized an electro-absorption modulator integrated with generic technology on a semi-insulating substrate. The modulator operates at 64Gb/s with 6dB dynamic extinction ratio, a bias voltage of −2.2V and a voltage swing of 3.5V.

查看译文

关键词

active-passive generic integration platform,dynamic extinction ratio,semiinsulating substrate,generic technology,electro absorption modulator operation,voltage -2.2 V,voltage 3.5 V,bit rate 64 Gbit/s,InP

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要