Comparative Study of X- and γ-Ray Detectors with MoO x , TiO x and TiN Schottky Contacts

Electrical characteristics of the Mo-MoO x /p-CdTe/MoO x -Mo, Ti-TiO x /p-CdTe/MoO x -Mo and Ti-TiN/p-CdTe/MoO x -Mo structures, manufactured by magnetron sputtering of the thin films on CdTe semi-insulating crystals, produced by Acrorad Co. Ltd were studied. The optimization of conditions of the substrate pretreatment and the contacts deposition allowed to reduce the dark current of the Mo-MoO x /p-CdTe/MoO x -Mo detectors compared to earlier analogs and, consequently, to improve its spectrometric characteristics. There was shown that the structure Mo-MoO x /p-CdTe/MoO x -Mo, TiTiO x /p-CdTe/MoO x -Mo and Ti-TiN/p-CdTe/MoO x -Mo can be used for practical applications in the X- and γ-ray detectors.