Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

We demonstrated the growth of wurtzite-crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single-crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain-matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X-ray diffraction (XRD) confirmed the in-plane crystallization of BeO-on-substrates in the (002){102}(BeO)||(002){102}(Sub) orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 m (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier-filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.