SET Sensitivity of Trigate Silicon Nanowire Field-Effect Transistors

Melanie Raine,Marc Gaillardin,Martial Martinez,Olivier Duhamel,Jonathan Riffaud,Thierry Lagutere,Claude Marcandella,Philippe Paillet,Nicolas Richard,Maud Vinet,Francois Andrieu,Sylvain Barraud

IEEE Transactions on Nuclear Science（2019）

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摘要

The single-event transient (SET) response of silicon-on-insulator trigate silicon nanowires is investigated using direct measurements of current transients. Resulting collected charge distributions are compared to simulations into two steps: Monte Carlo simulations of deposited energy and technology computer-aided design simulation of collected charge, using detailed description of charge generati...

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关键词

Transient analysis,Ions,Current measurement,Silicon,Nanoscale devices,Geometry,Logic gates

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