Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter Topics: 1 b: New Materials and Active Devices & 7b: High-voltage DC Power Supplies (U)
european conference on power electronics and applications(2018)
Abstract
Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. However, parasitic inductance of the package may significantly increase power losses and limit the operation. This paper aims to quantify experimentally these losses in a soft-switching converter. A “removable” stray inductance is implemented in a setup consisting of discrete SiC MOSFET units. Thus, the power loss of the transistors with and without stray inductance can be compared. Similarly slower switching speeds are also implemented to fully emulate a 62-mm module. The power loss induced by the package can thus be evaluated.
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Key words
discrete SiC MOSFET units,removable stray inductance,power converters,SiC MOSFETs,Wide Bandgap power semiconductors,high-voltage DC power supplies,soft-switching SiC power converter,parasitic inductance,power loss,size 62 mm,SiC
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