Development of Bus Bar Structure with Low Imbalance in Stray Inductance for Three-phase Silicon Carbide Inverter

European Conference on Power Electronics and Applications(2018)

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摘要
This paper presents a three-phase inverter structure for reducing imbalances in the switching loss among power modules connected parallel to one another and among the three phases. The proposed double-sided structure achieved an imbalance of less than 3% in the experimental switching loss using all-SiC power modules.
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关键词
Silicon Carbide (SiC),MOSFET,Bus bar,Parallel operation,Switching losses
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