Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

IEEE Transactions on Electron Devices(2019)

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摘要
In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The proposed model relies on the thermionic emission current mechanism, the barrier modulation, and the full-depletion approximation to obtain the c...
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关键词
Electric potential,Electrostatics,Charge transfer,Capacitance,Computational modeling,Photodiodes,Semiconductor device modeling
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