Low RA Magnetic Tunnel Junction Arrays in Conjunction with Low Switching Current and High Breakdown Voltage for STT-MRAM at 10 Nm and Beyond
2018 IEEE Symposium on VLSI Technology（2018）
Key words
low switching current,STT-MRAM,low resistance-area-product magnetic tunnel junctions,switching voltage,ultra-thin synthetic antiferromagnetic layer,high-reliability MRAM,low RA magnetic tunnel junction arrays,breakdown voltage,CMOS integrated circuit,barrier reliability,Co-Pt pseudoalloy pinned layer,low-RA MTJ arrays,high-performance MRAM,size 10.0 nm,time 5.0 ns,Co-Pt
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