Selective Pore-Sealing Of Highly Porous Ultralow-K Dielectrics For Ulsi Interconnects By Cyclic Initiated Chemical Vapor Deposition Process
2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY(2018)
Abstract
A selective pore-sealing of highly porous ultralow-k (pULK) dielectrics by a cyclic initiated CVD (iCVD) process has been successfully developed. A negligible increase of the pULK thickness and the k value was achieved even after the hermetic pore-sealing. The pore-sealed pULK films show low leakage current and excellent dielectric reliability, comparable to the commercialized low-k dielectric. The selective pore-sealing process does not deposit the pore-sealing layer on Cu surface. The porosity difference between pULK and Cu surfaces is attributed to the origin of the selectivity in the cyclic iCVD process.
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Key words
dielectric reliability,porous low-k dielectric thin films,cyclic initiated chemical vapor deposition,Cu surface,porosity,cyclic iCVD treatment,dielectric permittivity,pore-sealing layer,pore-sealed pULK films,hermetic pore-sealing,ULSI interconnects,Cu,SiCOH
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