Nanosecond Laser Anneal For Beol Performance Boost In Advanced Finfets

Rinus T.P. Lee, N. Petrov, J. Kassim, M. Gribelyuk, J. Yang, L. Cao,K.B. Yeap,T. Shen,A. N. Zainuddin, A. Chandrashekar, S. Ray,E. Ramanathan, A. S. Mahalingam,R. Chaudhuri,J. Mody, D. Damjanovic, Z. Sun, R. Sporer, T. J. Tang, H. Liu,J. Liu, B. Krishnan

2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2018）

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摘要

Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 - 5% in I-Dsat. Additionally, reliability was enhanced with an improvement in dielectric V-BD and Cu EM performance without impacting the ULK mechanical integrity. Our results demonstrate a path to extending Cu interconnects for performance boost in 14nm FinFETs and beyond.

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关键词

nanosecond laser anneal,BEOL performance boost,advanced FinFETs,nanosecond laser-induced grain growth,ULK mechanical integrity,FinFET technology,copper interconnect resistance,reliability,EM performance,size 14.0 nm,Cu

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