Controllable synthesis of γ'-Fe4N via prolonged high vacuum magnetic annealing of deposited Fe-N thin films
Journal of Magnetism and Magnetic Materials(2019)
Abstract
•Controlled synthesis of Fe–N thin films by reactive sputtering combined with annealing process.•The annealing temperature for Fe–N totally changed into γ′-Fe4N can be as low as 375 °C.•The magnetic properties of the Fe–N thin films mainly depend on their structures and compositions.
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Key words
Half-metal,FeN,Reactive sputtering,Crystal phase control,Magnetic field annealing
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