3ω method based experimental measurements on Kapitza resistance of Si/SiO 2 interfaces

SiO 2 thin films are applied as dielectric layer in semiconductor devices for its excellent physical and electronic properties. The thermal boundary resistance plays a significant role in heat conduction process in nanostructures, which subsequently tightly correlates with the performance of micro/nano devices. In this paper, the heat conductance across Si/SiO 2 interface with different thickness of SiO 2 thin film has been investigated by using the slope 3ω method based on the steady-state conduction technique. The apparent thermal conductivity and the intrinsic thermal conductivity of SiO 2 thin films as well as the interfacial thermal resistance were evaluated. It was found that the apparent thermal conductivity monotonically reduced with respect to the decreasing of the film thickness. The estimated intrinsic thermal conductivity of SiO 2 thin films is about 1.301W/mK and the estimated interface thermal resistance between the film and the substrate is approximate 2.237×10 −8 m 2 KW −1 , which has agreement with the reported results in the literature.