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Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studies

B. Sadovyi,P. Sadovyi,I. Petrusha,I. Dziecielewski,S. Porowski,V. Turkevich,A. Nikolenko,B. Tsykaniuk,V. Strelchuk,I. Grzegory

Journal of Crystal Growth（2019）

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Abstract
•“proof–of–concept” experiments probing Fe-Ga-N system for bulk growth of GaN are discussed.•melting of Fe and Fe-Ga alloys in contact with nitrogen is studied by DTA.•new possibility of GaN crystallization from Fe-Ga-N solution at high pressure and high temperature is demonstrated.•physical properties of newly grown GaN single crystals are investigated.
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Key words
B1. Gallium nitride,A2. Growth from solutions,A2. Iron based N solution,B1. Crystallization at high pressure,A1. DTA at high pressure
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