Acquiring MIS Structures Based on Bа<sub>0.8</sub>Sr<sub>0.2</sub>TiО<sub>3 </sub>Ferroelectric Films and their Properties

The paper considers formation of Ba0.8Sr0.2TiO3 ferroelectric films of MIS structures on silicon wafer with magnetron sputtering in HF discharge of the initial target material from the polycrystal ferroelectric in the oxygen atmosphere. Dielectric and volt-farad characteristics of MIS structures have been explored, depending on formation modes of Ba0.8Sr0.2TiO3 ferroelectric films. The authors determined technological modes of film deposition for acquiring MIS structures with the best electrophysical properties.