340 GHz lens-coupled 4 × 4 GaAs detector array for terahertz imaging applications
Electronics Letters（2018）
Abstract
A 340 GHz 4 × 4 detector array based on 0.18 μm gallium arsenide technology is presented. Each pixel is composed of a planar log-periodic antenna, a Schottky barrier diode, and a pair of bonding pads. The detector array is mounted on a silicon lens and assembled onto a PCB using the authors' novel flip-chip structure. Off-axis performances of the lens-coupled detector array are demonstrated experi...
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Key words
flip-chip devices,gallium arsenide,III-V semiconductors,lens antennas,log periodic antennas,Schottky barriers,Schottky diodes,silicon,submillimetre wave antennas,terahertz wave imaging
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