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Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

M. Bockowski,M. Iwinska,M. Amilusik,B. Lucznik,M. Fijalkowski,E. Litwin-Staszewska,R. Piotrzkowski,T. Sochacki

Journal of Crystal Growth（2018）

Cited 27|Views52
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Abstract
•Doping in HVPE-GaN is presented.•Ammonothermal GaN crystals of high quality are used as seeds.•Silicon or germanium is used in order to grow highly conductive HVPE-GaN.•Carbon, iron, or manganese are introduced to increase the resistivity of crystallized material.
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Key words
A1. Doping,A3. Hydride vapor phase epitaxy,B1. Nitrides,B2. Semiconducting III–V materials
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