Compositionally tunable ternary Bi 2 ( Se 1 x Te x ) 3 and ( Bi 1 y Sb y ) 2 Te 3 thin films via low pressure chemical vapour deposition †

The inherently rapid ligand substitution kinetics associated with the novel and chemically compatible precursors, [MCl3(E Bu2)3] (M = Sb, Bi; E = Se, Te), enable CVD growth of ternary Bi2(Se1 xTex)3 and (Bi1 ySby)2Te3 thin films with very good compositional, structural and morphological control, for the first time. X-ray diffraction data follow Vegard’s law and Raman bands shift linearly with the atom substitutions, indicating very well-distributed solid solutions.